2SK851 Datasheet and Replacement
Type Designator: 2SK851
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO3PN
2SK851 substitution
2SK851 Datasheet (PDF)
2sk851.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK851 DESCRIPTION Drain Current ID=30A@ TC=25 Drain Source Voltage- : VDSS=200V(Min) APPLICATIONS Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 200 V
Datasheet: 2SK3688-01SJ , 2SK3689-01 , 2SK3690-01 , 2SK3691-01MR , 2SK819 , 2SK831 , 2SK833 , 2SK849 , AO3400 , 2SK854 , 2SK855 , 2SK856 , 2SK858 , 2SK859 , 2SK867 , 2SK867A , 2SK868 .
History: 10N60L-TQ2-R | 10N60G-TF3T-T | 10N60AF | IPB034N06L3G | IPB039N04LG
Keywords - 2SK851 MOSFET datasheet
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History: 10N60L-TQ2-R | 10N60G-TF3T-T | 10N60AF | IPB034N06L3G | IPB039N04LG



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