All MOSFET. 2SK870 Datasheet

 

2SK870 Datasheet and Replacement


   Type Designator: 2SK870
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 150 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3P
 

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2SK870 Datasheet (PDF)

 ..1. Size:223K  inchange semiconductor
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2SK870

isc N-Channel MOSFET Transistor 2SK870DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

 9.1. Size:3231K  1
 2sk875.pdf pdf_icon

2SK870

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 2sk876.pdf pdf_icon

2SK870

 9.3. Size:576K  toshiba
 2sk879.pdf pdf_icon

2SK870

2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications Unit: mm High breakdown voltage: VGDS = -50 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low noise: NF = 0.5dB (typ.) (RG = 100 k, f = 120 Hz) Small package Absolute Maximum Ratings (Ta =

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Datasheet: 2SK856 , 2SK858 , 2SK859 , 2SK867 , 2SK867A , 2SK868 , 2SK868A , 2SK869 , IRF530 , 2SK871 , 2SK3987-01L , 2SK3987-01S , 2SK3987-01SJ , 2SK3988-01 , 2SK3989-01MR , 2SK3990-01L , 2SK3990-01S .

Keywords - 2SK870 MOSFET datasheet

 2SK870 cross reference
 2SK870 equivalent finder
 2SK870 lookup
 2SK870 substitution
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