2SK870 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2SK870
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   tonⓘ - Turn-on Time: 150 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3P

2SK870 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK870 Datasheet (PDF)

..1. Size:223K inchange semiconductor
2sk870.pdf

isc N-Channel MOSFET Transistor 2SK870DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.1. Size:3231K 1
2sk875.pdf

9.2. Size:3454K 1
2sk876.pdf

9.3. Size:576K toshiba
2sk879.pdf

2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications Unit: mm High breakdown voltage: VGDS = -50 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low noise: NF = 0.5dB (typ.) (RG = 100 k, f = 120 Hz) Small package Absolute Maximum Ratings (Ta =

9.4. Size:1661K nec
2sk873.pdf