2SK3512-01S MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3512-01S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 195 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO263
2SK3512-01S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3512-01S Datasheet (PDF)
2sk3512-01l-s-sj.pdf
http://www.fujielectric.com/products/semiconductor/2SK3512-01L,S,SJ FUJI POWER MOSFETSuper FAP-G Series N-CHANNEL SILICON POWER MOSFETOutline DrawingsFeaturesHigh speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proofApplicationsSwitching regulatorsP4UPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteris
2sk3512l.pdf
isc N-Channel MOSFET Transistor 2SK3512LFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3512s.pdf
isc N-Channel MOSFET Transistor 2SK3512SFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
