2SK3513-01S Datasheet and Replacement
Type Designator: 2SK3513-01S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 195 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO263
2SK3513-01S substitution
2SK3513-01S Datasheet (PDF)
2sk3513-01l-s-sj.pdf

2SK3513-01L,S,SJ200303FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
2sk3513s.pdf

isc N-Channel MOSFET Transistor 2SK3513SFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3513l.pdf

isc N-Channel MOSFET Transistor 2SK3513LFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: 2SK3511 , 2SK3511-S , 2SK3511-Z , 2SK3511-ZJ , 2SK3512-01L , 2SK3512-01S , 2SK3512-01SJ , 2SK3513-01L , K2611 , 2SK3513-01SJ , 2SK3556-01L , 2SK3556-01S , 2SK3556-01SJ , 2SK3694-01L , 2SK3694-01S , 2SK3694-01SJ , 2SK3695-01 .
Keywords - 2SK3513-01S MOSFET datasheet
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