2SK612-Z Datasheet. Specs and Replacement
Type Designator: 2SK612-Z
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO251
2SK612-Z substitution
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2SK612-Z datasheet
2sk615.pdf
Silicon MOS FETs (Small Signal) 2SK615 2SK615 Silicon N-Channel MOS Unit mm For switching 6.9 0.1 2.5 0.1 1.5 Features 1.5 R0.9 1.0 R0.9 Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL Easy automatic- /manual-insertion due to M type package. Self-fix- 0.85 ing to printed circuits board. 0.55 0.1 0.45 0.05 3 2 1 Absolute Maximu... See More ⇒
2sk614.pdf
Silicon MOS FETs (Small Signal) 2SK614 2SK614 Silicon N-Channel MOS Unit mm For switching 5.0 0.2 4.0 0.2 Features Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL +0.2 +0.2 0.45 0.1 0.45 0.1 1.27 1.27 Absolute Maximum Ratings (Ta = 25 C) 1 Source Parameter Symbol Rating Unit 2 Drain 3 Gate Drain-Source voltage VDS 80 ... See More ⇒
Detailed specifications: 2SK3813-Z, 2SK3814, 2SK3814-Z, 2SK3716, 2SK3716-Z, 2SK1282-Z, 2SK3740-ZK, 2SK3984-ZK, IRF540N, 2SK2890-01MR, 2SK2891-01, 2SK2892-01R, 2SK2893-01, 2SK2894-01R, 2SK2895-01, 2SK2896-01L, 2SK2896-01S
Keywords - 2SK612-Z MOSFET specs
2SK612-Z cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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