2SK3581-01SJ MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3581-01SJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 160 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
Package: TO263
2SK3581-01SJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3581-01SJ Datasheet (PDF)
2sk3581-01l-s-sj.pdf
2SK3581-01L,S,SJ200304FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
2sk3581l.pdf
isc N-Channel MOSFET Transistor 2SK3581LFEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.46(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3581s.pdf
isc N-Channel MOSFET Transistor 2SK3581SFEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.46(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
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