2SK3983-01SJ Datasheet and Replacement. Cross Reference Search

2SK3983-01SJ Datasheet (PDF)

..1. Size:357K inchange semiconductor
2sk3983-01sj.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3983-01SJFEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

3.1. Size:357K inchange semiconductor
2sk3983-01s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3983-01SFEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

4.1. Size:234K fuji
2sk3983-01l-s-sj.pdf pdf_icon

2SK3983-01L,S,SJFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)See to P4Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

4.2. Size:283K inchange semiconductor
2sk3983-01l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3983-01LFEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Datasheet: 2SK3930-01L , 2SK3930-01S , 2SK3930-01SJ , 2SK3933-01L , 2SK3933-01S , 2SK3933-01SJ , 2SK3983-01L , 2SK3983-01S , 20N50 , 2SK3924-01L , 2SK3924-01S , 2SK3924-01SJ , 2SK3921-01L , 2SK3921-01S , 2SK3921-01SJ , 2SK3598-01 , 2SK3600-01L .