2SK3608-01L Datasheet and Replacement
Type Designator: 2SK3608-01L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO262
2SK3608-01L Datasheet (PDF)
2sk3608-01l-s-sj.pdf

2SK3608-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
2sk3608l.pdf

isc N-Channel MOSFET Transistor 2SK3608LFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 170m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3608s.pdf

isc N-Channel MOSFET Transistor 2SK3608SFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 170m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
Datasheet: 2SK3601-01 , 2SK3602-01 , 2SK3603-01MR , 2SK3604-01L , 2SK3604-01S , 2SK3604-01SJ , 2SK3605-01 , 2SK3606-01 , AON6380 , 2SK3608-01S , 2SK3608-01SJ , 2SK3609-01 , AF1332N , AF1333P , 2SK1408 , 2SK1409 , 2SK1410 .
Keywords - 2SK3608-01L MOSFET datasheet
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