AF1332N Datasheet and Replacement
Type Designator: AF1332N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 0.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 53 nS
Cossⓘ - Output Capacitance: 17 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: SOT323
AF1332N substitution
AF1332N Datasheet (PDF)
af1332n.pdf

AF1332NN-Channel Enhancement Mode Power MOSFET Features Description - Simple Gate Drive The advanced power MOSFET provides the designer - 2KV ESD Rating (Per MIL-STD-883D) with the best combination of fast switching, low - Small Package Outline (SOT323) on-resistance and cost-effectiveness. Product Summary BVDSS = 20V RDS (on) = 600m. ID = 600mA Pin Assignments
af1333p.pdf

AF1333PP-Channel Enhancement Mode Power MOSFET Features Description - Simple Gate Drive The advanced power MOSFET provides the designer - Fast Switching Speed with the best combination of fast switching, low - Small Package Outline (SOT323) on-resistance and cost-effectiveness. Product Summary BVDSS = -20V RDS (on) = 800m. ID = -550mA Pin Assignments Pin Descrip
Datasheet: 2SK3604-01S , 2SK3604-01SJ , 2SK3605-01 , 2SK3606-01 , 2SK3608-01L , 2SK3608-01S , 2SK3608-01SJ , 2SK3609-01 , IRF520 , AF1333P , 2SK1408 , 2SK1409 , 2SK1410 , 2SK1411 , 2SK1476 , 2SK1477 , 2SK1545 .
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