All MOSFET. AF1332N Datasheet

 

AF1332N Datasheet and Replacement


   Type Designator: AF1332N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: SOT323
 

 AF1332N substitution

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AF1332N Datasheet (PDF)

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AF1332N

AF1332NN-Channel Enhancement Mode Power MOSFET Features Description - Simple Gate Drive The advanced power MOSFET provides the designer - 2KV ESD Rating (Per MIL-STD-883D) with the best combination of fast switching, low - Small Package Outline (SOT323) on-resistance and cost-effectiveness. Product Summary BVDSS = 20V RDS (on) = 600m. ID = 600mA Pin Assignments

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AF1332N

AF1333PP-Channel Enhancement Mode Power MOSFET Features Description - Simple Gate Drive The advanced power MOSFET provides the designer - Fast Switching Speed with the best combination of fast switching, low - Small Package Outline (SOT323) on-resistance and cost-effectiveness. Product Summary BVDSS = -20V RDS (on) = 800m. ID = -550mA Pin Assignments Pin Descrip

Datasheet: 2SK3604-01S , 2SK3604-01SJ , 2SK3605-01 , 2SK3606-01 , 2SK3608-01L , 2SK3608-01S , 2SK3608-01SJ , 2SK3609-01 , IRF520 , AF1333P , 2SK1408 , 2SK1409 , 2SK1410 , 2SK1411 , 2SK1476 , 2SK1477 , 2SK1545 .

History: AON7410

Keywords - AF1332N MOSFET datasheet

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