AF1333P Datasheet. Specs and Replacement
Type Designator: AF1333P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: SOT323
AF1333P substitution
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AF1333P datasheet
af1333p.pdf
AF1333P P-Channel Enhancement Mode Power MOSFET Features Description - Simple Gate Drive The advanced power MOSFET provides the designer - Fast Switching Speed with the best combination of fast switching, low - Small Package Outline (SOT323) on-resistance and cost-effectiveness. Product Summary BVDSS = -20V RDS (on) = 800m . ID = -550mA Pin Assignments Pin Descrip... See More ⇒
af1332n.pdf
AF1332N N-Channel Enhancement Mode Power MOSFET Features Description - Simple Gate Drive The advanced power MOSFET provides the designer - 2KV ESD Rating (Per MIL-STD-883D) with the best combination of fast switching, low - Small Package Outline (SOT323) on-resistance and cost-effectiveness. Product Summary BVDSS = 20V RDS (on) = 600m . ID = 600mA Pin Assignments ... See More ⇒
Detailed specifications: 2SK3604-01SJ, 2SK3605-01, 2SK3606-01, 2SK3608-01L, 2SK3608-01S, 2SK3608-01SJ, 2SK3609-01, AF1332N, AO3400A, 2SK1408, 2SK1409, 2SK1410, 2SK1411, 2SK1476, 2SK1477, 2SK1545, 2SK1546
Keywords - AF1333P MOSFET specs
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