2SK1410 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1410
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 16 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: TO3PN
2SK1410 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1410 Datasheet (PDF)
1.1. 2sk1410.pdf 
Size:61K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1410 DESCRIPTION ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) UNI SYMBOL VALUE ARAMETER T VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Vol
4.1. 2sk1412.pdf Size:109K _sanyo
Ordering number:EN4228 N-Channel Silicon MOSFET 2SK1412 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance, low input capacitance, unit:mm Ultrahigh-speed switching. 2078B · High reliability (Adoption of HVP process). [2SK1412] · Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 0.9 1.2 1.2 0.7 0.75 1 : Gate 1 2 3 2 : Drain 3 :
4.2. 2sk1414.pdf Size:109K _sanyo
Ordering number:EN4230 N-Channel Silicon MOSFET 2SK1414 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance, low input capacitance, unit:mm Ultrahigh-speed switching. 2077A · High reliability (Adoption of HVP process). [2SK1414] 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Gate 1 2 3 2 : Drain 3 : Source 5.45 5.45 SANYO : TO-3PBL Specifications Abs
4.3. 2sk1413.pdf Size:111K _sanyo
Ordering number:EN4229 N-Channel Silicon MOSFET 2SK1413 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance, low input capacitance, unit:mm Ultrahigh-speed switching. 2076B · High reliability (Adoption of HVP process). [2SK1413] · Micaless package facilitating mounting. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Gate 1 2 3 2 : Drain 3 : So
4.4. 2sk1416.pdf Size:98K _sanyo
Ordering number:EN3554 N-Channel Silicon MOSFET 2SK1416 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-state resistance. unit:mm · Ultrahigh-speed switching. 2052C · Converters. [2SK1416] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at T
4.5. 2sk1417.pdf Size:101K _sanyo
Ordering number:EN3555 N-Channel Silicon MOSFET 2SK1417 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-state resistance. unit:mm · Ultrahigh-speed switching. 2052C · Converters. [2SK1417] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at T
4.6. 2sk1412ls.pdf Size:30K _sanyo
Ordering number : ENN4228B 2SK1412LS N-Channel Silicon MOSFET 2SK1412LS Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance, low input capacitance. unit : mm • Ultrahigh-speed switching. 2078C • High reliability (Adoption of HVP process). [2SK1412LS] • Micaless package facilitating mounting. 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 : Gate
4.7. 2sk1419.pdf Size:109K _sanyo
Ordering number:EN3557A N-Channel Silicon MOSFET 2SK1419 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2063A · Converters. [2SK1419] · Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Sourse 2.55 2.55 SANYO : TO-220ML Spe
4.8. 2sk1418.pdf Size:103K _sanyo
Ordering number:EN3556 N-Channel Silicon MOSFET 2SK1418 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-state resistance. unit:mm · Ultrahigh-speed switching. 2052C · Converters. [2SK1418] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at T
4.9. 2sk1411.pdf Size:61K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1411 DESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RA
Datasheet: 2SK3608-01L , 2SK3608-01S , 2SK3608-01SJ , 2SK3609-01 , AF1332N , AF1333P , 2SK1408 , 2SK1409 , IRF9540N , 2SK1411 , 2SK1476 , 2SK1477 , 2SK1545 , 2SK1546 , 2SK1550 , 2SK3549-01 , 2SK3550-01R .
