IRFB9N60A Datasheet and Replacement

PD - 91811IRFB9N60AHEXFET Power MOSFET Dynamic dv/dt RatingD Repetitive Avalanche RatedVDSS = 600V Fast Switching Ease of ParalelingRDS(on) = 0.75 Simple Drive RequirementsGID = 9.2ASDescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device design, low on-resistance a

PD - 94821SMPS MOSFETIRFB9N60APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.75 9.2A High speed power switching Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche V

IRFB9N60A, SiHFB9N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.75RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 49COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 20and CurrentConfig

iscN-Channel MOSFET Transistor IRFB9N60AFEATURESLow drain-source on-resistance:RDS(ON) =0.75 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

PD - 95416IRFB9N65APbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)650V 0.93 8.5Al Uninterruptible Power Supplyl High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andTO-22

PD - 91815CSMPS MOSFETIRFB9N65AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93 8.5A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre

IRFB9N65A, SiHFB9N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650Requirement AvailableRDS(on) ()VGS = 10 V 0.93 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 48COMPLIANTRuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 19and CurrentConfigu

iscN-Channel MOSFET Transistor IRFB9N65AFEATURESLow drain-source on-resistance:RDS(ON) =0.93 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU