IRFB9N60A datasheet, подбор замены

 ..1. Size:135K  international rectifier
 irfb9n60a.pdf 

PD - 91811 IRFB9N60A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 600V Fast Switching Ease of Paraleling RDS(on) = 0.75 Simple Drive Requirements G ID = 9.2A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance a

 ..2. Size:157K  international rectifier
 irfb9n60apbf.pdf 

PD - 94821 SMPS MOSFET IRFB9N60APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.75 9.2A High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche V

 ..3. Size:211K  vishay
 irfb9n60a sihfb9n60a.pdf 

IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.75 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 49 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 20 and Current Config

 ..4. Size:285K  inchange semiconductor
 irfb9n60a.pdf 

iscN-Channel MOSFET Transistor IRFB9N60A FEATURES Low drain-source on-resistance RDS(ON) =0.75 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

 7.1. Size:156K  international rectifier
 irfb9n65apbf.pdf 

PD - 95416 IRFB9N65APbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) 650V 0.93 8.5A l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and TO-22

 7.2. Size:102K  international rectifier
 irfb9n65a.pdf 

PD - 91815C SMPS MOSFET IRFB9N65A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93 8.5A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre

 7.3. Size:223K  vishay
 irfb9n65a sihfb9n65a.pdf 

IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement Available RDS(on) ( )VGS = 10 V 0.93 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 48 COMPLIANT Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 19 and Current Configu

 7.4. Size:285K  inchange semiconductor
 irfb9n65a.pdf 

iscN-Channel MOSFET Transistor IRFB9N65A FEATURES Low drain-source on-resistance RDS(ON) =0.93 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU