2SK3596-01SJ Spec and Replacement
Type Designator: 2SK3596-01SJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
Package: TO263
2SK3596-01SJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3596-01SJ Specs
2sk3596-01l-s-sj.pdf
2SK3596-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
2sk3596s.pdf
isc N-Channel MOSFET Transistor 2SK3596S FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 66m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
2sk3596l.pdf
isc N-Channel MOSFET Transistor 2SK3596L FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 66m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
Detailed specifications: 2SK3549-01 , 2SK3550-01R , 2SK3554-01 , 2SK3555-01MR , 2SK3594-01 , 2SK3595-01MR , 2SK3596-01L , 2SK3596-01S , 60N06 , 2SK3597-01 , 2SK3610-01 , 2SK3611-01MR , 2SK3612-01L , 2SK3612-01S , 2SK3612-01SJ , 2SK3613-01 , 2SK3644-01 .
Keywords - 2SK3596-01SJ MOSFET specs
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