2N7218
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N7218
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 28
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 59(max)
nC
trⓘ - Rise Time: 105(max)
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.077
Ohm
Package:
TO254
2N7218
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N7218
Datasheet (PDF)
..1. Size:64K omnirel
2n7218 2n7219 2n7221 2n7222.pdf
2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,QUALIFIED TO MIL-PRF-19500/596100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche RatedFEATURESRepetitive Avalanche RatingIsolated and Hermetically SealedL
0.1. Size:21K semelab
2n7218u.pdf
IRFN140SEME2N7218ULABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 100V ID(cont) 28A RDS(on) 0.077FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE RE
9.1. Size:165K international rectifier
2n7219u.pdf
PD - 91548CIRFN240JANTX2N7219UJANTXV2N7219UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN240 0.18 18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
Datasheet: 2N7119
, 2N7120
, 2N7121
, 2N7122
, 2N7123
, 2N7124
, 2N7125
, 2N7126
, STF13NM60N
, 2N7219
, 2N7220
, 2N7221
, 2N7224
, 2N7225
, 2N7227
, 2N7227JV
, 2N7227JX
.