2N7218 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N7218
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Drain Current |Id|: 28 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 59 nC
Drain-Source Capacitance (Cd): 1660 pF
Maximum Drain-Source On-State Resistance (Rds): 0.077 Ohm
Package: TO254
2N7218 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N7218 Datasheet (PDF)
0.1. 2n7218 2n7219 2n7221 2n7222.pdf 
Size:64K _omnirel
2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated FEATURES •Repetitive Avalanche Rating •Isolated and Hermetically Sealed •L
0.2. 2n7218u.pdf Size:21K _semelab
IRFN140 SEME 2N7218U LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS 100V ID(cont) 28A Ω RDS(on) 0.077Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE RE
9.1. 2n7219u.pdf Size:165K _international_rectifier
PD - 91548C IRFN240 JANTX2N7219U JANTXV2N7219U POWER MOSFET REF:MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 200V, N-CHANNEL ® Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN240 0.18 Ω 18A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-
Datasheet: 2N7119 , 2N7120 , 2N7121 , 2N7122 , 2N7123 , 2N7124 , 2N7125 , 2N7126 , IRFZ44A , 2N7219 , 2N7220 , 2N7221 , 2N7224 , 2N7225 , 2N7227 , 2N7227JV , 2N7227JX .
