2N7218 Datasheet and Replacement
Type Designator: 2N7218
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 59(max) nC
tr ⓘ - Rise Time: 105(max) nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
Package: TO254
2N7218 substitution
2N7218 Datasheet (PDF)
2n7218 2n7219 2n7221 2n7222.pdf

2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,QUALIFIED TO MIL-PRF-19500/596100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche RatedFEATURESRepetitive Avalanche RatingIsolated and Hermetically SealedL
2n7218u.pdf

IRFN140SEME2N7218ULABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 100V ID(cont) 28A RDS(on) 0.077FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE RE
2n7219u.pdf

PD - 91548CIRFN240JANTX2N7219UJANTXV2N7219UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN240 0.18 18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
Datasheet: 2N7119 , 2N7120 , 2N7121 , 2N7122 , 2N7123 , 2N7124 , 2N7125 , 2N7126 , IRFZ46N , 2N7219 , 2N7220 , 2N7221 , 2N7224 , 2N7225 , 2N7227 , 2N7227JV , 2N7227JX .
Keywords - 2N7218 MOSFET datasheet
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