2SK3612-01L Spec and Replacement
Type Designator: 2SK3612-01L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.7 nS
Cossⓘ - Output Capacitance: 88 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO262
2SK3612-01L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3612-01L Specs
2sk3612-01l-s-sj.pdf
2SK3612-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
2sk3612l.pdf
isc N-Channel MOSFET Transistor 2SK3612L FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 260m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
2sk3612s.pdf
isc N-Channel MOSFET Transistor 2SK3612S FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 260m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
Detailed specifications: 2SK3594-01 , 2SK3595-01MR , 2SK3596-01L , 2SK3596-01S , 2SK3596-01SJ , 2SK3597-01 , 2SK3610-01 , 2SK3611-01MR , IRFZ44N , 2SK3612-01S , 2SK3612-01SJ , 2SK3613-01 , 2SK3644-01 , 2SK3646-01L , 2SK3646-01S , 2SK3646-01SJ , 2SK3647-01 .
Keywords - 2SK3612-01L MOSFET specs
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