All MOSFET. 2SK2764-01R Datasheet

 

2SK2764-01R Datasheet and Replacement


   Type Designator: 2SK2764-01R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO3PF
 

 2SK2764-01R substitution

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2SK2764-01R Datasheet (PDF)

 ..1. Size:61K  fuji
 2sk2764-01r.pdf pdf_icon

2SK2764-01R

FUJI POWER MOSFET2SK2764-01RN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S Series5.50.30.30.215.53.23.2+0.3FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving power0.32.10.3 1.6Avalanche-proof+0.2 1.10.10.2 3.50.2 +0.20.25.45 5.45 0.6ApplicationsSwitching regulators1. Gate2. DrainUPS

 8.1. Size:449K  fuji
 2sk2766-01r.pdf pdf_icon

2SK2764-01R

 8.2. Size:291K  fuji
 2sk2760-01.pdf pdf_icon

2SK2764-01R

N-channel MOS-FET2SK2760-01FAP-IIS Series 600V 1,2 9A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristi

 8.3. Size:28K  fuji
 2sk2767-01.pdf pdf_icon

2SK2764-01R

N-channel MOS-FET2SK2767-01FAP-IIS Series 900V 5,5 3,5A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteris

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History: UPA2755GR

Keywords - 2SK2764-01R MOSFET datasheet

 2SK2764-01R cross reference
 2SK2764-01R equivalent finder
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