2SK2764-01R MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2764-01R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 300 nC
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO3PF
2SK2764-01R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2764-01R Datasheet (PDF)
2sk2764-01r.pdf
FUJI POWER MOSFET2SK2764-01RN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S Series5.50.30.30.215.53.23.2+0.3FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving power0.32.10.3 1.6Avalanche-proof+0.2 1.10.10.2 3.50.2 +0.20.25.45 5.45 0.6ApplicationsSwitching regulators1. Gate2. DrainUPS
2sk2760-01.pdf
N-channel MOS-FET2SK2760-01FAP-IIS Series 600V 1,2 9A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristi
2sk2767-01.pdf
N-channel MOS-FET2SK2767-01FAP-IIS Series 900V 5,5 3,5A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteris
2sk2765-01.pdf
FUJI POWER MOSFET2SK2765-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulators3. SourceUPS (Uninterruptible Power Supply)JEDECDC-DC convertersEIAJ SC-65Maximum ratings and characteristicAbsolute maximum ratingsEqui
2sk2769-01mr.pdf
FUJI POWER MOSFET2SK2769-01MRN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220F15FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proof2.54ApplicationsSwitching regulators3. SourceUPS (Uninterruptible Power Supply)JEDECDC-DC converters SC-67EIAJMaximum ratings and characteristicAbsolute maximum
2sk2761-01mr.pdf
FUJI POWER MOSFET2SK2761-01MRN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220F15FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proof2.54ApplicationsSwitching regulators3. SourceUPS (Uninterruptible Power Supply)JEDECDC-DC converters SC-67EIAJMaximum ratings and characteristicAbsolute maximum
2sk2765-01.pdf
isc N-Channel MOSFET Transistor 2SK2765-01FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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