2SK3920-01 Datasheet and Replacement
Type Designator: 2SK3920-01
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 270
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 67
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 360
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
TO220AB
-
MOSFET ⓘ Cross-Reference Search
2SK3920-01 Datasheet (PDF)
..1. Size:189K fuji
2sk3920-01.pdf 
2SK3920-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220ABHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless
..2. Size:289K inchange semiconductor
2sk3920-01.pdf
isc N-Channel MOSFET Transistor 2SK3920-01FEATURESDrain Current : I = 67A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.1. Size:186K fuji
2sk3922-01.pdf
2SK3922-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching Low on-resistanceOutline Drawings [mm]No secondary breadown Low driving powerAvalanche-proofTFPApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless othe
8.2. Size:93K fuji
2sk3926-01mr.pdf
2SK3926-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25
8.3. Size:154K fuji
2sk3924-01l-s-sj.pdf
2SK3924-01L,S,SJN-CHANNEL SILICON POWER MOSFETOutline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(
8.4. Size:189K fuji
2sk3923-01.pdf
2SK3923-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220ABHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless
8.5. Size:113K fuji
2sk3928-01.pdf
2SK3928-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220ABFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
8.6. Size:227K fuji
2sk3921-01l-s-sj.pdf
2SK3921-01L,S,SJFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)See to P4Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
8.7. Size:92K fuji
2sk3925-01.pdf
2SK3925-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220ABFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
8.8. Size:114K fuji
2sk3929.pdf
2SK3929-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
8.9. Size:153K fuji
2sk3927-01l-s-sj.pdf
2SK3927-01L,S,SJN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(T
8.10. Size:357K inchange semiconductor
2sk3921-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3921-01SJFEATURESDrain Current : I = 67A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
8.11. Size:356K inchange semiconductor
2sk3927-01s.pdf
isc N-Channel MOSFET Transistor 2SK3927-01SFEATURESDrain Current : I = 34A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
8.12. Size:280K inchange semiconductor
2sk3929-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3929-01MRFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 800m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
8.13. Size:280K inchange semiconductor
2sk3926-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3926-01MRFEATURESDrain Current : I = 34A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
8.14. Size:357K inchange semiconductor
2sk3924-01s.pdf
isc N-Channel MOSFET Transistor 2SK3924-01SFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
8.15. Size:283K inchange semiconductor
2sk3927-01l.pdf
isc N-Channel MOSFET Transistor 2SK3927-01LFEATURESDrain Current : I = 34A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
8.16. Size:289K inchange semiconductor
2sk3923-01.pdf
isc N-Channel MOSFET Transistor 2SK3923-01FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
8.17. Size:283K inchange semiconductor
2sk3921-01l.pdf
isc N-Channel MOSFET Transistor 2SK3921-01LFEATURESDrain Current : I = 67A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
8.18. Size:283K inchange semiconductor
2sk3924-01l.pdf
isc N-Channel MOSFET Transistor 2SK3924-01LFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
8.19. Size:357K inchange semiconductor
2sk3927-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3927-01SJFEATURESDrain Current : I = 34A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
8.20. Size:289K inchange semiconductor
2sk3928-01.pdf
isc N-Channel MOSFET Transistor 2SK3928-01FEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 800m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
8.21. Size:357K inchange semiconductor
2sk3921-01s.pdf
isc N-Channel MOSFET Transistor 2SK3921-01SFEATURESDrain Current : I = 67A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
8.22. Size:358K inchange semiconductor
2sk3924-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3924-01SJFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
8.23. Size:288K inchange semiconductor
2sk3925-01.pdf
isc N-Channel MOSFET Transistor 2SK3925-01FEATURESDrain Current : I = 34A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
Datasheet: 2SK2760-01
, 2SK2764-01R
, 2SK2766-01R
, 2SK2767-01
, 2SK3505-01MR
, 2SK1211
, 2SK1211-01
, 2SK1212-01R
, IRF9540N
, 2SK3922-01
, 2SK3923-01
, 2SK3925-01
, 2SK3926-01MR
, 2SK3981-01
, 2SK3982-01MR
, 2SK3985-01
, 2SK3986-01MR
.
History: STRH12P10
| PSMN1R5-40ES
| IAUS180N04S4N015
| SVG041R2NL5
| BSZ146N10LS5
| IAUC100N10S5N040
| 2SK3483
Keywords - 2SK3920-01 MOSFET datasheet
2SK3920-01 cross reference
2SK3920-01 equivalent finder
2SK3920-01 lookup
2SK3920-01 substitution
2SK3920-01 replacement
