All MOSFET. IRFBC20L Datasheet

 

IRFBC20L MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFBC20L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18(max) nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: TO262

 IRFBC20L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFBC20L Datasheet (PDF)

 ..1. Size:355K  international rectifier
 irfbc20s irfbc20l.pdf

IRFBC20L IRFBC20L

PD - 9.1014IRFBC20S/LPRELIMINARYHEXFET Power MOSFET Surface Mount (IRFBC20S)D Low-profile through-hole (IRFBC20L) VDSS = 600V Available in Tape & Reel (IRFBC20S) Dynamic dv/dt RatingRDS(on) = 4.4 150C Operating TemperatureG Fast SwitchingID = 2.2A Fully Avalanche RatedSDescriptionThird generation HEXFETs from international Rectifier provide the designer

 ..2. Size:396K  international rectifier
 irfbc20spbf irfbc20lpbf.pdf

IRFBC20L IRFBC20L

PD - 95543IRFBC20S/LPbF Lead-Free7/21/04Document Number: 91007 www.vishay.com1IRFBC20S/LPbFDocument Number: 91007 www.vishay.com2IRFBC20S/LPbFDocument Number: 91007 www.vishay.com3IRFBC20S/LPbFDocument Number: 91007 www.vishay.com4IRFBC20S/LPbFDocument Number: 91007 www.vishay.com5IRFBC20S/LPbFDocument Number: 91007 www.vishay.com6IRFBC20S/LPbF

 ..3. Size:266K  vishay
 irfbc20s sihfbc20s irfbc20l sihfbc20l.pdf

IRFBC20L IRFBC20L

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC20S, SiHFBC20S)RDS(on) ()VGS = 10 V 4.4 Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) Available in Tape and Reel (IRFBC20, SiiHFBC20S)Qg (Max.) (nC) 18 Dynamic dV/dt RatingQgs

 ..4. Size:251K  vishay
 irfbc20lpbf.pdf

IRFBC20L IRFBC20L

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface Mount (IRFBC20S/SiHFBC20S)VDS (V) 600 Low-Profile Through-Hole (IRFBC20L/SiHFBC20L)AvailableRDS(on) ()VGS = 10 V 4.4 Available in Tape and Reel (IRFBC20S/SiHFBC20S)RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 18 150 C Operating TemperatureQg

 7.1. Size:171K  international rectifier
 irfbc20.pdf

IRFBC20L IRFBC20L

 7.2. Size:2081K  international rectifier
 irfbc20pbf.pdf

IRFBC20L IRFBC20L

PD - 94985IRFBC20PbF Lead-Free2/5/04Document Number: 91006 www.vishay.com1IRFBC20PbFDocument Number: 91006 www.vishay.com2IRFBC20PbFDocument Number: 91006 www.vishay.com3IRFBC20PbFDocument Number: 91006 www.vishay.com4IRFBC20PbFDocument Number: 91006 www.vishay.com5IRFBC20PbFDocument Number: 91006 www.vishay.com6IRFBC20PbFTO-220AB Package Out

 7.3. Size:1571K  vishay
 irfbc20pbf sihfbc20.pdf

IRFBC20L IRFBC20L

IRFBC20, SiHFBC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* Fast SwitchingQg (Max.) (nC) 18COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 8.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 7.4. Size:1568K  vishay
 irfbc20 sihfbc20.pdf

IRFBC20L IRFBC20L

IRFBC20, SiHFBC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* Fast SwitchingQg (Max.) (nC) 18COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 8.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 7.5. Size:1520K  infineon
 irfbc20 sihfbc20.pdf

IRFBC20L IRFBC20L

IRFBC20, SiHFBC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* Fast SwitchingQg (Max.) (nC) 18COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 8.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 7.6. Size:284K  inchange semiconductor
 irfbc20.pdf

IRFBC20L IRFBC20L

iscN-Channel MOSFET Transistor IRFBC20FEATURESLow drain-source on-resistance:RDS(ON) = 4.4 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Datasheet: IRFB11N50A , IRFB9N30A , IRFB9N60A , IRFB9N65A , IRFBA1404 , IRFBA22N50A , IRFBA35N60C , IRFBC20 , SKD502T , IRFBC20S , IRFBC30 , IRFBC30A , IRFBC30AS , IRFBC30L , IRFBC30S , IRFBC32 , IRFBC40 .

 

 
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