IRFBC20L - описание и поиск аналогов

PD - 9.1014 IRFBC20S/L PRELIMINARY HEXFET Power MOSFET Surface Mount (IRFBC20S) D Low-profile through-hole (IRFBC20L) VDSS = 600V Available in Tape & Reel (IRFBC20S) Dynamic dv/dt Rating RDS(on) = 4.4 150 C Operating Temperature G Fast Switching ID = 2.2A Fully Avalanche Rated S Description Third generation HEXFETs from international Rectifier provide the designer

PD - 95543 IRFBC20S/LPbF Lead-Free 7/21/04 Document Number 91007 www.vishay.com 1 IRFBC20S/LPbF Document Number 91007 www.vishay.com 2 IRFBC20S/LPbF Document Number 91007 www.vishay.com 3 IRFBC20S/LPbF Document Number 91007 www.vishay.com 4 IRFBC20S/LPbF Document Number 91007 www.vishay.com 5 IRFBC20S/LPbF Document Number 91007 www.vishay.com 6 IRFBC20S/LPbF

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC20S, SiHFBC20S) RDS(on) ( )VGS = 10 V 4.4 Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) Available in Tape and Reel (IRFBC20, SiiHFBC20S) Qg (Max.) (nC) 18 Dynamic dV/dt Rating Qgs

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mount (IRFBC20S/SiHFBC20S) VDS (V) 600 Low-Profile Through-Hole (IRFBC20L/SiHFBC20L) Available RDS(on) ( )VGS = 10 V 4.4 Available in Tape and Reel (IRFBC20S/SiHFBC20S) RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 18 150 C Operating Temperature Qg

PD - 94985 IRFBC20PbF Lead-Free 2/5/04 Document Number 91006 www.vishay.com 1 IRFBC20PbF Document Number 91006 www.vishay.com 2 IRFBC20PbF Document Number 91006 www.vishay.com 3 IRFBC20PbF Document Number 91006 www.vishay.com 4 IRFBC20PbF Document Number 91006 www.vishay.com 5 IRFBC20PbF Document Number 91006 www.vishay.com 6 IRFBC20PbF TO-220AB Package Out

IRFBC20, SiHFBC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 4.4 RoHS* Fast Switching Qg (Max.) (nC) 18 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 8.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

IRFBC20, SiHFBC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 4.4 RoHS* Fast Switching Qg (Max.) (nC) 18 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 8.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

IRFBC20, SiHFBC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 4.4 RoHS* Fast Switching Qg (Max.) (nC) 18 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 8.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

iscN-Channel MOSFET Transistor IRFBC20 FEATURES Low drain-source on-resistance RDS(ON) = 4.4 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT