2SK3872-01SJ Specs and Replacement
Type Designator: 2SK3872-01SJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 230 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.4 nS
Cossⓘ - Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
Package: TO263
2SK3872-01SJ substitution
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2SK3872-01SJ datasheet
2sk3872-01s.pdf
isc N-Channel MOSFET Transistor 2SK3872-01S FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 230V(Min) DSS Static Drain-Source On-Resistance R = 76m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒
2sk3872-01l-s-sj.pdf
2SK3872-01L,S,SJ N-CHANNEL SILICON POWER MOSFET 200406 Outline Drawings (mm) FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings ... See More ⇒
2sk3872-01l.pdf
isc N-Channel MOSFET Transistor 2SK3872-01L FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 230V(Min) DSS Static Drain-Source On-Resistance R = 76m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒
Detailed specifications: 2SK3981-01, 2SK3982-01MR, 2SK3985-01, 2SK3986-01MR, 2SK3870-01, 2SK3871-01MR, 2SK3872-01L, 2SK3872-01S, STP80NF70, 2SK3873-01, 2SK3874-01R, 2SK3875-01, 2SK3514-01, 2SK3532-01MR, 2SK3533-01, 2SK3535-01, 2SK3537-01MR
Keywords - 2SK3872-01SJ MOSFET specs
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