All MOSFET. 2SK3872-01SJ Datasheet

 

2SK3872-01SJ MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3872-01SJ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 270 W

Maximum Drain-Source Voltage |Vds|: 230 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 8.4 nS

Drain-Source Capacitance (Cd): 230 pF

Maximum Drain-Source On-State Resistance (Rds): 0.076 Ohm

Package: TO263

2SK3872-01SJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3872-01SJ Datasheet (PDF)

1.1. 2sk3872-01l-s-sj.pdf Size:153K _fuji

2SK3872-01SJ
2SK3872-01SJ

2SK3872-01L,S,SJ N-CHANNEL SILICON POWER MOSFET 200406 Outline Drawings (mm) FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings

4.1. 2sk387.pdf Size:61K _upd

2SK3872-01SJ
2SK3872-01SJ

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK387 DESCRIPTION ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Fast Switching Speed APPLICATIONS ·High speed applications. such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25

4.2. 2sk3878.pdf Size:205K _toshiba

2SK3872-01SJ
2SK3872-01SJ

2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?- MOSIV) 2SK3878 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.0 ? (typ.) • High forward transfer admittance: ?Yfs? = 7.0 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolut

 4.3. 2sk3879.pdf Size:292K _toshiba

2SK3872-01SJ
2SK3872-01SJ

2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSIV) 2SK3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 ? (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 640 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

4.4. 2sk3870-01.pdf Size:95K _fuji

2SK3872-01SJ
2SK3872-01SJ

2SK3870-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C

 4.5. 2sk3875-01.pdf Size:101K _fuji

2SK3872-01SJ
2SK3872-01SJ

2SK3875-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless other

4.6. 2sk3871-01mr.pdf Size:96K _fuji

2SK3872-01SJ
2SK3872-01SJ

2SK3871-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°

4.7. 2sk3876-01r.pdf Size:100K _fuji

2SK3872-01SJ
2SK3872-01SJ

2SK3876-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25В°C unless other

4.8. 2sk3873-01.pdf Size:112K _fuji

2SK3872-01SJ
2SK3872-01SJ

2SK3873-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless other

4.9. 2sk3874-01r.pdf Size:109K _fuji

2SK3872-01SJ
2SK3872-01SJ

2SK3874-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless o

Datasheet: 2SK3981-01 , 2SK3982-01MR , 2SK3985-01 , 2SK3986-01MR , 2SK3870-01 , 2SK3871-01MR , 2SK3872-01L , 2SK3872-01S , IRFZ24N , 2SK3873-01 , 2SK3874-01R , 2SK3875-01 , 2SK3514-01 , 2SK3532-01MR , 2SK3533-01 , 2SK3535-01 , 2SK3537-01MR .

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