2SK3780-01 MOSFET Datasheet: N-Ch, 200V, 73A. Full specification with pinout and replacement list

2SK3780-01 Specs and Replacement

Type Designator: 2SK3780-01

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 410 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 73 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 94 nS

Cossⓘ - Output Capacitance: 530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO247

2SK3780-01 substitution

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2SK3780-01 datasheet

..1. Size:104K fuji
2sk3780-01.pdf pdf_icon

2SK3780-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless other... See More ⇒

8.1. Size:110K nec
2sk3782.pdf pdf_icon

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3782 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK3782 is suitable for converter of ECM. 1.2 0.1 +0.1 0.3 0.05 MAX. 0.33 FEATURES High gain 3 0 to 0.02 -0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 k ) Low noise 2 1 -109 dB (V... See More ⇒

8.2. Size:112K nec
2sk3783.pdf pdf_icon

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3783 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK3783 is suitable for converter of ECM. 1.0 FEATURES High gain -0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 k ) Low noise -109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 k ) Super small ... See More ⇒

8.3. Size:102K fuji
2sk3781-01r.pdf pdf_icon

2SK3781-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless o... See More ⇒