All MOSFET. 2SK3788-01 Datasheet

 

2SK3788-01 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3788-01

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 410 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 92 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 112 nS

Drain-Source Capacitance (Cd): 530 pF

Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm

Package: TO247

2SK3788-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3788-01 Datasheet (PDF)

1.1. 2sk3788-01.pdf Size:98K _fuji

2SK3788-01
2SK3788-01

2SK3788-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless other

4.1. 2sk3782.pdf Size:110K _nec

2SK3788-01
2SK3788-01

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3782 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3782 is suitable for converter of ECM. 1.2 ±0.1 +0.1 0.3 –0.05 MAX. 0.33 FEATURES • High gain 3 0 to 0.02 -0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise 2 1 -109 dB (V

4.2. 2sk3783.pdf Size:112K _nec

2SK3788-01
2SK3788-01

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3783 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3783 is suitable for converter of ECM. 1.0 FEATURES • High gain -0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise -109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super small

 4.3. 2sk3780-01.pdf Size:104K _fuji

2SK3788-01
2SK3788-01

2SK3780-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless other

4.4. 2sk3781-01r.pdf Size:102K _fuji

2SK3788-01
2SK3788-01

2SK3781-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless o

 4.5. 2sk3789-01r.pdf Size:95K _fuji

2SK3788-01
2SK3788-01

2SK3789-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless o

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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