2SK1201 Specs and Replacement
Type Designator: 2SK1201
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 265 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO3P
2SK1201 substitution
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2SK1201 datasheet
2sk1201.pdf
isc N-Channel MOSFET Transistor 2SK1201 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra... See More ⇒
Detailed specifications: 2SK1321, 2SK1322, 2SK1323, 2SK1329, 2SK1330, 2SK1330A, 2SK1362, 2SK1403, IRFB4115, 2SK1203, 2SK1204, 2SK1205, 2SK3507, 2SK3539G0L, 2SK3541GP, 2SK3541MGP, 2SK3541SGP
Keywords - 2SK1201 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 5NA80 | FX20VSJ-3 | NTD4904N | FHU5N60A | AOD2904 | AUIRF7343Q | AGM612MNA
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