2SK1205 Datasheet and Replacement
Type Designator: 2SK1205
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 5
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 235
nS
Cossⓘ -
Output Capacitance: 1200
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2
Ohm
Package:
TO3P
-
MOSFET ⓘ Cross-Reference Search
2SK1205 Datasheet (PDF)
8.4. Size:203K inchange semiconductor
2sk1204.pdf 
isc N-Channel MOSFET Transistor 2SK1204DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra
8.5. Size:61K inchange semiconductor
2sk1200.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1200 DESCRIPTION Drain Current ID= 3A@ TC=25 Drain Source Voltage- : VDSS= 900V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 900 V
8.6. Size:61K inchange semiconductor
2sk1202.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1202 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS= 900V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 900 V
8.7. Size:203K inchange semiconductor
2sk1201.pdf
isc N-Channel MOSFET Transistor 2SK1201DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra
8.8. Size:203K inchange semiconductor
2sk1203.pdf
isc N-Channel MOSFET Transistor 2SK1203DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra
Datasheet: 2SK1329
, 2SK1330
, 2SK1330A
, 2SK1362
, 2SK1403
, 2SK1201
, 2SK1203
, 2SK1204
, 2SK3878
, 2SK3507
, 2SK3539G0L
, 2SK3541GP
, 2SK3541MGP
, 2SK3541SGP
, 2SK3541T2L
, 2SK3541VGP
, 2SK3546G0L
.
History: FQI2N30TU
| LP3218DT1G
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