2SK1205 Specs and Replacement
Type Designator: 2SK1205
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 235 nS
Cossⓘ -
Output Capacitance: 1200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO3P
- MOSFET ⓘ Cross-Reference Search
2SK1205 datasheet
8.4. Size:203K inchange semiconductor
2sk1204.pdf 
isc N-Channel MOSFET Transistor 2SK1204 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra... See More ⇒
8.5. Size:61K inchange semiconductor
2sk1200.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1200 DESCRIPTION Drain Current ID= 3A@ TC=25 Drain Source Voltage- VDSS= 900V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 900 V... See More ⇒
8.6. Size:61K inchange semiconductor
2sk1202.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1202 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS= 900V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 900 V... See More ⇒
8.7. Size:203K inchange semiconductor
2sk1201.pdf
isc N-Channel MOSFET Transistor 2SK1201 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra... See More ⇒
8.8. Size:203K inchange semiconductor
2sk1203.pdf
isc N-Channel MOSFET Transistor 2SK1203 DESCRIPTION Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra... See More ⇒
Detailed specifications: 2SK1329, 2SK1330, 2SK1330A, 2SK1362, 2SK1403, 2SK1201, 2SK1203, 2SK1204, 8205A, 2SK3507, 2SK3539G0L, 2SK3541GP, 2SK3541MGP, 2SK3541SGP, 2SK3541T2L, 2SK3541VGP, 2SK3546G0L
Keywords - 2SK1205 MOSFET specs
2SK1205 cross reference
2SK1205 equivalent finder
2SK1205 pdf lookup
2SK1205 substitution
2SK1205 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
