2SK1205
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK1205
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 100
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 5
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 235
ns
Cossⓘ - Выходная емкость: 1200
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2
Ohm
Тип корпуса:
TO3P
- подбор MOSFET транзистора по параметрам
2SK1205
Datasheet (PDF)
8.4. Size:203K inchange semiconductor
2sk1204.pdf 
isc N-Channel MOSFET Transistor 2SK1204DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra
8.5. Size:61K inchange semiconductor
2sk1200.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1200 DESCRIPTION Drain Current ID= 3A@ TC=25 Drain Source Voltage- : VDSS= 900V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 900 V
8.6. Size:61K inchange semiconductor
2sk1202.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1202 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS= 900V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 900 V
8.7. Size:203K inchange semiconductor
2sk1201.pdf 
isc N-Channel MOSFET Transistor 2SK1201DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra
8.8. Size:203K inchange semiconductor
2sk1203.pdf 
isc N-Channel MOSFET Transistor 2SK1203DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra
Другие MOSFET... FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, CS150N03A8
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
History: 2SK3525-01MR
| SIHG47N60S
| FDZ1416NZ
| 9N95
| NTMFS5C410NT3G
| AP02N70EI-HF
| HGI110N08AL
