2SK1206 Datasheet and Replacement
Type Designator: 2SK1206
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 85
nS
Cossⓘ -
Output Capacitance: 720
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6
Ohm
Package:
TO3PFM
- MOSFET Cross-Reference Search
2SK1206 Datasheet (PDF)
8.4. Size:203K inchange semiconductor
2sk1204.pdf 
isc N-Channel MOSFET Transistor 2SK1204DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra
8.5. Size:61K inchange semiconductor
2sk1200.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1200 DESCRIPTION Drain Current ID= 3A@ TC=25 Drain Source Voltage- : VDSS= 900V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 900 V
8.6. Size:61K inchange semiconductor
2sk1202.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1202 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS= 900V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 900 V
8.7. Size:203K inchange semiconductor
2sk1201.pdf
isc N-Channel MOSFET Transistor 2SK1201DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra
8.8. Size:203K inchange semiconductor
2sk1203.pdf
isc N-Channel MOSFET Transistor 2SK1203DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra
Datasheet: 2SK3943-ZP
, 2SK3715
, 2SK3723
, 2SK3731
, 2SK3738
, 2SK3748-1E
, 2SK3755
, 2SK3758
, P60NF06
, 2SK1213
, 2SK1215F
, 2SK1217
, 2SK1222
, 2SK1224
, 2SK1684
, 2SK1685
, 2SK1686
.
History: 2SJ473-01S
| IRF7759L2TR1PBF
Keywords - 2SK1206 MOSFET datasheet
2SK1206 cross reference
2SK1206 equivalent finder
2SK1206 lookup
2SK1206 substitution
2SK1206 replacement
