IRFBC40AS
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFBC40AS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 6.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 42(max)
nC
trⓘ - Rise Time: 23
nS
Cossⓘ -
Output Capacitance: 136
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2
Ohm
Package:
TO263
IRFBC40AS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFBC40AS
Datasheet (PDF)
..1. Size:609K international rectifier
irfbc40aspbf.pdf 
PD - 95545IRFBC40ASPbF Lead-Free7/22/04Document Number: 91113 www.vishay.com1IRFBC40ASPbFDocument Number: 91113 www.vishay.com2IRFBC40ASPbFDocument Number: 91113 www.vishay.com3IRFBC40ASPbFDocument Number: 91113 www.vishay.com4IRFBC40ASPbFDocument Number: 91113 www.vishay.com5IRFBC40ASPbFDocument Number: 91113 www.vishay.com6IRFBC40ASPbFDocum
..2. Size:361K vishay
irfbc40as sihfbc40as.pdf
IRFBC40AS, SiHFBC40ASVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 1.2 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 10RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanche
..3. Size:387K vishay
irfbc40aspbf sihfbc40as.pdf
IRFBC40AS, SiHFBC40ASVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 1.2 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 10RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanche
..4. Size:278K inchange semiconductor
irfbc40as.pdf
iscN-Channel MOSFET Transistor IRFBC40ASFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
6.1. Size:200K international rectifier
irfbc40a.pdf
SMPS MOSFETIRFBC40APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 1.2 6.2Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Aval
6.2. Size:189K international rectifier
irfbc40apbf.pdf
SMPS MOSFETIRFBC40APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 1.2 6.2Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Aval
6.3. Size:208K vishay
irfbc40a sihfbc40a.pdf
IRFBC40A, SiHFBC40AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 42COMPLIANTRuggednessQgs (nC) 10 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfigurati
6.4. Size:284K inchange semiconductor
irfbc40a.pdf
iscN-Channel MOSFET Transistor IRFBC40AFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
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