2SK1819-01MR Datasheet and Replacement
Type Designator: 2SK1819-01MR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: SC67
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2SK1819-01MR Datasheet (PDF)
2sk1819.pdf

isc N-Channel MOSFET Transistor 2SK1819DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSChopper regulatorMotor driveInvertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
2sk1813.pdf

Ordering number:EN4177N-Channel Silicon MOSFET2SK1813High-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2089 Converters.[2SK1813]10.24.51.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : TO-220MFSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Co
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IPI35CN10NG | MMBF5457 | 2N3797 | BSC079N10NSG | IPD90N06S4-05 | NCEP18N10AK | SIHFR310
Keywords - 2SK1819-01MR MOSFET datasheet
2SK1819-01MR cross reference
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2SK1819-01MR replacement
History: IPI35CN10NG | MMBF5457 | 2N3797 | BSC079N10NSG | IPD90N06S4-05 | NCEP18N10AK | SIHFR310



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