All MOSFET. 2SJ690 Datasheet

 

2SJ690 Datasheet and Replacement


   Type Designator: 2SJ690
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.119 Ohm
   Package: SC96
 

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2SJ690 Datasheet (PDF)

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2SJ690

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: 2SJ133-Z , 2SJ145 , 2SJ147 , 2SJ172 , 2SJ173 , 2SJ174 , 2SJ687 , 2SJ687-ZK , HY1906P , 2V7002K , 2V7002L , 2V7002W , 2SJ650 , 2SJ651 , 2SJ652-1E , 2SJ661-1E , 2SJ661-DL-1E .

History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452

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