2N7220 MOSFET. Datasheet pdf. Equivalent

2N7220 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N7220 Datasheet (PDF)

5.1. 2n7222u.pdf Size:179K _update-mosfet

PD - 91552C IRFN440 JANTX2N7222U JANTXV2N7222U POWER MOSFET REF:MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 500V, N-CHANNEL ® Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN440 0.85 Ω 8.0A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

5.2. 2n7222.pdf Size:226K _update-mosfet



 5.3. 2n7221u.pdf Size:220K _update-mosfet

PD-91550D IRFN340 JANTX2N7221U JANTXV2N7221U POWER MOSFET REF:MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 400V, N-CHANNEL ® Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN340 0.55 Ω 10A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- si

5.4. 2n7224u.pdf Size:165K _update-mosfet

PD - 91547C IRFN150 JANTX2N7224U JANTXV2N7224U POWER MOSFET REF:MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 100V, N-CHANNEL ® Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN150 0.07 Ω 34A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

 5.5. 2n7228u.pdf Size:180K _update-mosfet

PD - 90418C IRFN450 JANTX2N7228U JANTXV2N7228U POWER MOSFET REF:MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 500V, N-CHANNEL ® Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

5.6. 2n7225u.pdf Size:165K _update-mosfet

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7225 2N7225U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C u

5.7. 2n7227u.pdf Size:271K _update-mosfet

PD-91551D IRFN350 JANTX2N7227U JANTXV2N7227U POWER MOSFET REF:MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 400V, N-CHANNEL ® Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 Ω 14A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on- state resi

5.8. 2n7222u.pdf Size:179K _international_rectifier

PD - 91552C IRFN440 JANTX2N7222U JANTXV2N7222U POWER MOSFET REF:MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 500V, N-CHANNEL ® Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN440 0.85 Ω 8.0A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

5.9. 2n7221u.pdf Size:220K _international_rectifier

PD-91550D IRFN340 JANTX2N7221U JANTXV2N7221U POWER MOSFET REF:MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 400V, N-CHANNEL ® Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN340 0.55 Ω 10A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- si

5.10. 2n7224u.pdf Size:165K _international_rectifier

PD - 91547C IRFN150 JANTX2N7224U JANTXV2N7224U POWER MOSFET REF:MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 100V, N-CHANNEL ® Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN150 0.07 Ω 34A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

5.11. 2n7228u.pdf Size:180K _international_rectifier

PD - 90418C IRFN450 JANTX2N7228U JANTXV2N7228U POWER MOSFET REF:MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 500V, N-CHANNEL ® Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

5.12. 2n7222 2n7222 irfm440.pdf Size:226K _international_rectifier



5.13. 2n7227u.pdf Size:271K _international_rectifier

PD-91551D IRFN350 JANTX2N7227U JANTXV2N7227U POWER MOSFET REF:MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 400V, N-CHANNEL ® Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 Ω 14A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on- state resi

5.14. 2n7218 2n7219 2n7221 2n7222.pdf Size:64K _omnirel

2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated FEATURES •Repetitive Avalanche Rating •Isolated and Hermetically Sealed •L

5.15. 2n7224 2n7225 2n7227 2n7228.pdf Size:64K _omnirel

2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated FEATURES •Repetitive Avalanche Rating •Isolated and Hermetically Sealed •L

5.16. 2n7227.pdf Size:62K _apt

D TO-254 G 2N7227 400 Volt 0.315Ω S JX2N7227* JV2N7227* TM POWER MOS IV *QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter 2N7227 UNIT VDSS Drain-Source Voltage 400 Volts VGS Gate-Source Voltage ±20 Continuous Drain Current @ TC = 25°C 14 ID Co

5.17. 2n7228.pdf Size:61K _apt

D TO-254 G 2N7228 500 Volt 0.415Ω S JX2N7228* JV2N7228* TM POWER MOS IV *QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter 2N7228 UNIT VDSS Drain-Source Voltage 500 Volts VGS Gate-Source Voltage ±20 Continuous Drain Current @ TC = 25°C 12 ID Co

5.18. 2n7224 irfm150.pdf Size:23K _semelab

2N7224 SEME IRFM150 LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL 13.59 (0.535) 6.32 (0.249) POWER MOSFET 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) VDSS 100V ID(cont) 34A RDS(on) 0.070 1 2 3 FEATURES • REPETITIVE AVALANCHE RATING • ISOLATED AND HERMETICALLY SEALED • ALTERNATIVE TO TO-3 PACKAGE 0.89 (0.035) 1.14 (0

5.19. 2n7225u.pdf Size:165K _microsemi

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7225 2N7225U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C u

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MOSFET: IPP45N04S4L-08 | IPI45N04S4L-08 | IPP12CNE8NG | IPI12CNE8NG | IPD12CNE8NG | IPP08CNE8NG | IPI08CNE8NG | IPI06CN10NG | IPP054NE8NG | IPI05CNE8NG | IPP050N06NG | SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F |