2N7220 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2N7220
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm
Тип корпуса: TO254
2N7220 Datasheet (PDF)
2n7227u.pdf
PD-91551DIRFN350JANTX2N7227UJANTXV2N7227UPOWER MOSFETREF:MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN350 0.315 14AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resi
2n7221u.pdf
PD-91550DIRFN340JANTX2N7221UJANTXV2N7221UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN340 0.55 10AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-si
2n7224u.pdf
PD - 91547CIRFN150JANTX2N7224UJANTXV2N7224UPOWER MOSFETREF:MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 100V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN150 0.07 34AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
2n7228u.pdf
PD - 90418CIRFN450JANTX2N7228UJANTXV2N7228UPOWER MOSFETREF:MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN450 0.415 12AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
2n7222u.pdf
PD - 91552CIRFN440JANTX2N7222UJANTXV2N7222UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN440 0.85 8.0AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
2n7218 2n7219 2n7221 2n7222.pdf
2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,QUALIFIED TO MIL-PRF-19500/596100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche RatedFEATURESRepetitive Avalanche RatingIsolated and Hermetically SealedL
2n7224 2n7225 2n7227 2n7228.pdf
2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,QUALIFIED TO MIL-PRF-19500/592100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche RatedFEATURESRepetitive Avalanche RatingIsolated and Hermetically SealedL
2n7227.pdf
DTO-254G2N7227 400 Volt 0.315SJX2N7227*JV2N7227*TMPOWER MOS IV*QUALIFIED TO MIL-S-19500/592 31/7/92JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter 2N7227 UNITVDSS Drain-Source Voltage400VoltsVGS Gate-Source Voltage20Continuous Drain Current @ TC = 25C14IDCo
2n7228.pdf
DTO-254G2N7228 500 Volt 0.415SJX2N7228*JV2N7228*TMPOWER MOS IV*QUALIFIED TO MIL-S-19500/592 31/7/92JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter 2N7228 UNITVDSS Drain-Source Voltage500VoltsVGS Gate-Source Voltage20Continuous Drain Current @ TC = 25C12IDCo
2n7224 irfm150.pdf
2N7224SEMEIRFM150LABMECHANICAL DATADimensions in mm (inches)NCHANNEL13.59 (0.535) 6.32 (0.249)POWER MOSFET13.84 (0.545) 6.60 (0.260)3.53 (0.139) 1.02 (0.040)Dia.3.78 (0.149) 1.27 (0.050)VDSS 100VID(cont) 34ARDS(on) 0.0701 2 3FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE0.89 (0.035)1.14 (0
2n7225u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7225 2N7225U JANJANTXJANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C u
Другие MOSFET... 2N7121 , 2N7122 , 2N7123 , 2N7124 , 2N7125 , 2N7126 , 2N7218 , 2N7219 , IRFB31N20D , 2N7221 , 2N7224 , 2N7225 , 2N7227 , 2N7227JV , 2N7227JX , 2N7228 , 2N7228JV .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918