All MOSFET. IRFBE30 Datasheet

 

IRFBE30 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFBE30

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 78 nC

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: TO220AB

IRFBE30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFBE30 Datasheet (PDF)

1.1. irfbe30l irfbe30lpbf irfbe30s irfbe30spbf.pdf Size:471K _upd-mosfet

IRFBE30
IRFBE30

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 800 Definition RDS(on) ()VGS = 10 V 3.0 • Dynamic dV/dt Rating Qg (Max.) (nC) 78 • Repetitive Avalanche Rated Qgs (nC) 9.6 • Fast Switching Qgd (nC) 45 • Ease of Paralleling Configuration Single • Simple Drive Requirem

1.2. irfbe30.pdf Size:167K _international_rectifier

IRFBE30
IRFBE30

 1.3. irfbe30s-l.pdf Size:589K _international_rectifier

IRFBE30
IRFBE30

PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated D Fast Switching VDSS = 800V Ease of Paralleling Simple Drive Requirements RDS(on) = 3.0? Lead-Free G ID = 4.1A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design

1.4. irfbe30pbf.pdf Size:2101K _international_rectifier

IRFBE30
IRFBE30

PD - 94945 IRFBE30PbF Lead-Free 1/15/04 Document Number: 91118 www.vishay.com 1 IRFBE30PbF Document Number: 91118 www.vishay.com 2 IRFBE30PbF Document Number: 91118 www.vishay.com 3 IRFBE30PbF Document Number: 91118 www.vishay.com 4 IRFBE30PbF Document Number: 91118 www.vishay.com 5 IRFBE30PbF Document Number: 91118 www.vishay.com 6 IRFBE30PbF TO-220AB Package Outline

 1.5. irfbe30 sihfbe30.pdf Size:1517K _vishay

IRFBE30
IRFBE30

IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Ease of Paralleling Qgs (nC) 9.6 Qgd (nC) 45 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-2

1.6. irfbe30s sihfbe30s irfbe30l sihfbe30l.pdf Size:448K _vishay

IRFBE30
IRFBE30

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 800 Definition RDS(on) (?)VGS = 10 V 3.0 Dynamic dV/dt Rating Qg (Max.) (nC) 78 Repetitive Avalanche Rated Qgs (nC) 9.6 Fast Switching Qgd (nC) 45 Ease of Paralleling Configuration Single Simple Drive Requirements D Compli

Datasheet: IRFBC32 , IRFBC40 , IRFBC40A , IRFBC40AS , IRFBC40L , IRFBC40S , IRFBC42 , IRFBE20 , IRF9Z34 , IRFBF20 , IRFBF20L , IRFBF20S , IRFBF30 , IRFBG20 , IRFBG30 , IRFBL10N60A , IRFBL12N50A .

 
Back to Top