IRFBE30 - описание и поиск аналогов

PD - 94945 IRFBE30PbF Lead-Free 1/15/04 Document Number 91118 www.vishay.com 1 IRFBE30PbF Document Number 91118 www.vishay.com 2 IRFBE30PbF Document Number 91118 www.vishay.com 3 IRFBE30PbF Document Number 91118 www.vishay.com 4 IRFBE30PbF Document Number 91118 www.vishay.com 5 IRFBE30PbF Document Number 91118 www.vishay.com 6 IRFBE30PbF TO-220AB Package Ou

IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Ease of Paralleling Qgs (nC) 9.6 Qgd (nC) 45 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Ease of Paralleling Qgs (nC) 9.6 Qgd (nC) 45 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

iscN-Channel MOSFET Transistor IRFBE30 FEATURES Low drain-source on-resistance RDS(ON) =3.0 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated D Fast Switching VDSS = 800V Ease of Paralleling Simple Drive Requirements RDS(on) = 3.0 Lead-Free G ID = 4.1A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 800 Definition RDS(on) ( )VGS = 10 V 3.0 Dynamic dV/dt Rating Qg (Max.) (nC) 78 Repetitive Avalanche Rated Qgs (nC) 9.6 Fast Switching Qgd (nC) 45 Ease of Paralleling Configuration Single Simple Drive Requirem

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 800 Definition RDS(on) ( )VGS = 10 V 3.0 Dynamic dV/dt Rating Qg (Max.) (nC) 78 Repetitive Avalanche Rated Qgs (nC) 9.6 Fast Switching Qgd (nC) 45 Ease of Paralleling Configuration Single Simple Drive Requirem