All MOSFET. 2SJ683 Datasheet


2SJ683 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ683

Marking Code: J683

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 65 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 290 nC

Rise Time (tr): 620 nS

Drain-Source Capacitance (Cd): 1000 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0105 Ohm

Package: SOT323F

2SJ683 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


2SJ683 Datasheet (PDF)

1.1. 2sj683.pdf Size:261K _upd


Ordering number : ENA1057 2SJ683 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ683 Applications Features • Low ON-resistance. • Load S/W Applicaions. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source V

5.1. 2sj687-zk.pdf Size:269K _upd


To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.2. 2sj680.pdf Size:189K _toshiba


2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (?-MOS V) 2SJ680 Switching Applications Unit: mm Chopper Regulator, DC/DC Converter and 6.5±0.2 Motor Drive Applications 5.2±0.2 0.6 MAX. • Low drain-source ON-resistance: RDS (ON) = 1.6 ? (typ.) 1.1±0.2 0.9 • High forward transfer admittance: |Yfs| = 2.0 S (typ.) 0.6 MAX • Low leakage current: ID

 5.3. 2sj681 100301.pdf Size:180K _toshiba


2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ681 Relay Drive, DC-DC Converter and Motor Drive Unit: mm Applications 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 ? (typ.) (VGS = -10 V) 1.1 ± 0.2 High forward transfer admittance: |Yfs| = 5.0 S (typ.) 0.9 Low leakage current: I

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


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