2SJ683 - описание и поиск аналогов

Ordering number ENA1057 2SJ683 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ683 Applications Features Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source V

2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type ( -MOS V) 2SJ680 Switching Applications Unit mm Chopper Regulator, DC/DC Converter and Motor Drive Applications MAX Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs

2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ681 Relay Drive, DC-DC Converter and Motor Drive Unit mm Applications 6.5 0.2 5.2 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance RDS (ON) = 0.12 (typ.) (VGS = -10 V) 1.1 0.2 High forward transfer admittance Yfs = 5.0 S (typ.) 0.9 Low leakage current

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ681 www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.010 at VGS = - 10 V 55 RoHS* - 40 COMPLIANT 0.014 at VGS = - 4.5 V 54 TO-251 S G G D S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit Gat