2SJ210C Datasheet. Specs and Replacement

Type Designator: 2SJ210C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: SOT23

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2SJ210C substitution

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2SJ210C datasheet

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2SJ210C

Preliminary Data Sheet 2SJ210C R07DS1278EJ0200 Rev.2.00 P-CHANNEL MOSFET FOR SWITCHING Jul 08, 2015 Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = -10 ... See More ⇒

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2SJ210C

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2SJ210C

SMD Type MOSFET P-Channel MOSFET 2SJ210 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-60V 1 2 ID =-200m A +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 10 (VGS =-10V) +0.1 1.9-0.1 RDS(ON) 15 (VGS =-4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -6... See More ⇒

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2SJ210C

SMD Type MOSFET P-Channel MOSFET 2SJ210 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-60V ID =-200m A RDS(ON) 10 (VGS =-10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 RDS(ON) 15 (VGS =-4V) +0.1 1.9-0.2 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VD... See More ⇒

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Detailed specifications: 2SJ661-DL-E, 2SJ673, 2SJ683, 2SJ176, 2SJ177, 2SJ182L, 2SJ182S, 2SJ183, IRF1404, 2SJ214L, 2SJ214S, 2SJ215, 2SJ220L, 2SJ220S, 2SJ606, 2SJ606-S, 2SJ606-Z

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