All MOSFET. 2SJ210C Datasheet

 

2SJ210C Datasheet and Replacement


   Type Designator: 2SJ210C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: SOT23
 

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2SJ210C Datasheet (PDF)

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2SJ210C

Preliminary Data Sheet 2SJ210C R07DS1278EJ0200Rev.2.00P-CHANNEL MOSFET FOR SWITCHING Jul 08, 2015Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = -10

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2SJ210C

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2SJ210C

SMD Type MOSFETP-Channel MOSFET2SJ210SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-60V1 2 ID =-200m A+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 10 (VGS =-10V) +0.11.9-0.1 RDS(ON) 15 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -6

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2SJ210C

SMD Type MOSFETP-Channel MOSFET2SJ210SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features 3 VDS (V) =-60V ID =-200m A RDS(ON) 10 (VGS =-10V) 1 2+0.02+0.10.15 -0.020.95-0.1 RDS(ON) 15 (VGS =-4V)+0.11.9-0.21. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VD

Datasheet: 2SJ661-DL-E , 2SJ673 , 2SJ683 , 2SJ176 , 2SJ177 , 2SJ182L , 2SJ182S , 2SJ183 , IRF1404 , 2SJ214L , 2SJ214S , 2SJ215 , 2SJ220L , 2SJ220S , 2SJ606 , 2SJ606-S , 2SJ606-Z .

History: DMP3020LSS | IRF7739L1 | PHB66NQ03LT

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