2SJ626 Specs and Replacement
Type Designator: 2SJ626
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.388 Ohm
Package: SC96
2SJ626 substitution
- MOSFET ⓘ Cross-Reference Search
2SJ626 datasheet
2sj620.pdf
2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ620 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance R = 63 m (typ.) DS (ON) High forward transfer admittance Y = 15 S (typ.) fs Low leakage current I = -100 A (max) (V = -100 V) DS... See More ⇒
2sj628.pdf
Ordering number ENN7271 2SJ628 P-Channel Silicon MOSFET 2SJ628 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 1.8V drive. [2SJ628] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 Gate 0.75 2 Drain 3 Source Specifications SANYO PCP Absolute Maximum Ra... See More ⇒
2sj625.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: 2SJ606, 2SJ606-S, 2SJ606-Z, 2SJ607, 2SJ607-Z, 2SJ621, 2SJ624, 2SJ625, 7N65, 2SJ647, 2SJ649, 2SJ600, 2SJ601-Z, 2SJ602, 2SJ602-S, 2SJ602-Z, 2SJ603
Keywords - 2SJ626 MOSFET specs
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