2SJ626 - аналоги, параметры транзистора - Справочник транзисторов

2SJ626 даташит

..1. Size:329K nec
2sj626.pdf pdf_icon

2010 4 1 NEC

9.1. Size:345K toshiba
2sj620.pdf pdf_icon

2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ620 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance R = 63 m (typ.) DS (ON) High forward transfer admittance Y = 15 S (typ.) fs Low leakage current I = -100 A (max) (V = -100 V) DS

9.2. Size:30K sanyo
2sj628.pdf pdf_icon

Ordering number ENN7271 2SJ628 P-Channel Silicon MOSFET 2SJ628 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 1.8V drive. [2SJ628] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 Gate 0.75 2 Drain 3 Source Specifications SANYO PCP Absolute Maximum Ra

9.3. Size:193K nec
2sj625.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.