IRFBF30 Datasheet and Replacement
Type Designator: IRFBF30
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 3.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 320
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.7
Ohm
Package:
TO220AB
- MOSFET Cross-Reference Search
IRFBF30 Datasheet (PDF)
..1. Size:241K international rectifier
irfbf30pbf.pdf 
PD - 95631IRFBF30PbF Lead-Free8/4/04Document Number: 91122 www.vishay.com1IRFBF30PbFDocument Number: 91122 www.vishay.com2IRFBF30PbFDocument Number: 91122 www.vishay.com3IRFBF30PbFDocument Number: 91122 www.vishay.com4IRFBF30PbFDocument Number: 91122 www.vishay.com5IRFBF30PbFDocument Number: 91122 www.vishay.com6IRFBF30PbFPeak Diode Recovery
..3. Size:1073K vishay
irfbf30pbf sihfbf30.pdf
IRFBF30, SiHFBF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANTQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
..4. Size:1070K vishay
irfbf30 sihfbf30.pdf
IRFBF30, SiHFBF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANTQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
..5. Size:285K inchange semiconductor
irfbf30.pdf
iscN-Channel MOSFET Transistor IRFBF30FEATURESLow drain-source on-resistance:RDS(ON) =3.7 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
0.1. Size:57K international rectifier
irfbf30m.pdf
TranElectric IRFCF30Die for HexfetDie SpecificationGeneral description :Hexfet power MOSFET diewith the following features:* Dynamic dv/dt rating* Ease of paralleing* Repetitve avalanche rated* Fast switchingMechanical Characteristic:Silicon ChipDimension (mm): 4.42*5.32Dimension (mil): 174*206Thickness:Metallization: AlRecommended wire(mm): 0.25 Recommende
0.2. Size:261K vishay
irfbf30s irfbf30spbf.pdf
IRFBF30S, SiHFBF30SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 900DefinitionRDS(on) ()VGS = 10 V 3.7 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 10 Fast SwitchingQgd (nC) 42 Ease of Paralleling Simple Drive RequirementsConfiguration Single Compliant to R
9.1. Size:249K international rectifier
irfbf20pbf.pdf
PD - 95704IRFBF20PbF Lead-Free Lead-Free9/10/04Document Number: 91120 www.vishay.com1IRFBF20PbFDocument Number: 91120 www.vishay.com2IRFBF20PbFDocument Number: 91120 www.vishay.com3IRFBF20PbFDocument Number: 91120 www.vishay.com4IRFBF20PbFDocument Number: 91120 www.vishay.com5IRFBF20PbFDocument Number: 91120 www.vishay.com6IRFBF20PbFP
9.3. Size:391K international rectifier
irfbf20spbf irfbf20lpbf.pdf
PD - 95547IRFBF20S/LPbF Lead-Free7/22/04Document Number: 91121 www.vishay.com1IRFBF20S/LPbFDocument Number: 91121 www.vishay.com2IRFBF20S/LPbFDocument Number: 91121 www.vishay.com3IRFBF20S/LPbFDocument Number: 91121 www.vishay.com4IRFBF20S/LPbFDocument Number: 91121 www.vishay.com5IRFBF20S/LPbFDocument Number: 91121 www.vishay.com6IRFBF20S/LPbF
9.4. Size:311K international rectifier
irfbf20s irfbf20l.pdf
PD - 9.1665IRFBF20S/LPRELIMINARYHEXFET Power MOSFET Surface Mount (IRFBF20S)D Low-profile through-hole (IRFBF20L) VDSS = 900V Available in Tape & Reel (IRFBF20S) Dynamic dv/dt RatingRDS(on) = 8.0 150C Operating TemperatureG Fast SwitchingID = 1.7A Fully Avalanche RatedSDescriptionThird generation HEXFETs from international Rectifier provide the designer
9.5. Size:1055K vishay
irfbf20pbf sihfbf20.pdf
IRFBF20, SiHFBF20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitve Avalanche RatedRDS(on) ()VGS = 10 V 8.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 4.7Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
9.6. Size:270K vishay
irfbf20s sihfbf20s irfbf20l sihfbf20l.pdf
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S)RDS(on) ()VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S)Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs
9.7. Size:296K vishay
irfbf20spbf sihfbf20l sihfbf20s.pdf
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S)RDS(on) ()VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S)Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs
9.8. Size:1053K vishay
irfbf20 sihfbf20.pdf
IRFBF20, SiHFBF20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitve Avalanche RatedRDS(on) ()VGS = 10 V 8.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 4.7Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
Datasheet: IRFBC40L
, IRFBC40S
, IRFBC42
, IRFBE20
, IRFBE30
, IRFBF20
, IRFBF20L
, IRFBF20S
, 2SK3918
, IRFBG20
, IRFBG30
, IRFBL10N60A
, IRFBL12N50A
, IRFD014
, IRFD024
, IRFD110
, IRFD120
.
History: HCA90R300
| MC08N005C
| IRLR024
| CED05N8
| MDP5N50FTH
| AON6794
| BL10N70-A
Keywords - IRFBF30 MOSFET datasheet
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