IRFBF30 - описание и поиск аналогов

PD - 95631 IRFBF30PbF Lead-Free 8/4/04 Document Number 91122 www.vishay.com 1 IRFBF30PbF Document Number 91122 www.vishay.com 2 IRFBF30PbF Document Number 91122 www.vishay.com 3 IRFBF30PbF Document Number 91122 www.vishay.com 4 IRFBF30PbF Document Number 91122 www.vishay.com 5 IRFBF30PbF Document Number 91122 www.vishay.com 6 IRFBF30PbF Peak Diode Recovery

IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.7 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.7 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

iscN-Channel MOSFET Transistor IRFBF30 FEATURES Low drain-source on-resistance RDS(ON) =3.7 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

TranElectric IRFCF30 Die for Hexfet Die Specification General description Hexfet power MOSFET die with the following features * Dynamic dv/dt rating * Ease of paralleing * Repetitve avalanche rated * Fast switching Mechanical Characteristic Silicon Chip Dimension (mm) 4.42*5.32 Dimension (mil) 174*206 Thickness Metallization Al Recommended wire(mm) 0.25 Recommende

IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 900 Definition RDS(on) ( )VGS = 10 V 3.7 Dynamic dV/dt Rating Qg (Max.) (nC) 78 Repetitive Avalanche Rated Qgs (nC) 10 Fast Switching Qgd (nC) 42 Ease of Paralleling Simple Drive Requirements Configuration Single Compliant to R

PD - 95704 IRFBF20PbF Lead-Free Lead-Free 9/10/04 Document Number 91120 www.vishay.com 1 IRFBF20PbF Document Number 91120 www.vishay.com 2 IRFBF20PbF Document Number 91120 www.vishay.com 3 IRFBF20PbF Document Number 91120 www.vishay.com 4 IRFBF20PbF Document Number 91120 www.vishay.com 5 IRFBF20PbF Document Number 91120 www.vishay.com 6 IRFBF20PbF P

PD - 95547 IRFBF20S/LPbF Lead-Free 7/22/04 Document Number 91121 www.vishay.com 1 IRFBF20S/LPbF Document Number 91121 www.vishay.com 2 IRFBF20S/LPbF Document Number 91121 www.vishay.com 3 IRFBF20S/LPbF Document Number 91121 www.vishay.com 4 IRFBF20S/LPbF Document Number 91121 www.vishay.com 5 IRFBF20S/LPbF Document Number 91121 www.vishay.com 6 IRFBF20S/LPbF

PD - 9.1665 IRFBF20S/L PRELIMINARY HEXFET Power MOSFET Surface Mount (IRFBF20S) D Low-profile through-hole (IRFBF20L) VDSS = 900V Available in Tape & Reel (IRFBF20S) Dynamic dv/dt Rating RDS(on) = 8.0 150 C Operating Temperature G Fast Switching ID = 1.7A Fully Avalanche Rated S Description Third generation HEXFETs from international Rectifier provide the designer

IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitve Avalanche Rated RDS(on) ( )VGS = 10 V 8.0 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.7 Qgd (nC) 21 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S) RDS(on) ( )VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S) Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S) RDS(on) ( )VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S) Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs

IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitve Avalanche Rated RDS(on) ( )VGS = 10 V 8.0 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.7 Qgd (nC) 21 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D