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2SJ292 Spec and Replacement


   Type Designator: 2SJ292
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: TO220AB

 2SJ292 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ292 Specs

 ..1. Size:22K  hitachi
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2SJ292

2SJ292 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2SJ292 ... See More ⇒

 9.1. Size:25K  hitachi
 2sj294.pdf pdf_icon

2SJ292

2SJ294 Silicon P Channel MOS FET Application TO 220FM High speed power switching Features Low on resistance High speed switching 2 Low drive current 1 2 3 4 V gate drive device can be driven from 1 5 V source Suitable for Switching regulator, DC DC 1. Gate converter 2. Drain Avalanche Ratings 3. Source 3 Table 1 Absolute Maximum Ratings (T... See More ⇒

 9.2. Size:30K  hitachi
 2sj293.pdf pdf_icon

2SJ292

2SJ293 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ293 Absolute Ma... See More ⇒

 9.3. Size:50K  hitachi
 2sj296l-s.pdf pdf_icon

2SJ292

www.DataSheet4U.com 2SJ296(L), 2SJ296(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate ... See More ⇒

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Detailed specifications: 2SJ245L , 2SJ245S , 2SJ246L , 2SJ246S , 2SJ279L , 2SJ279S , 2SJ280L , 2SJ280S , IRF530 , 2SJ293 , 2SJ294 , 2SJ295 , 2SJ494 , 2SJ495 , 2SJ498 , 2SJ557A , 2SJ472-01L .

History: SI4124DY

Keywords - 2SJ292 MOSFET specs

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