All MOSFET. 2SJ296S Datasheet

 

2SJ296S MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ296S

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 95 nS

Drain-Source Capacitance (Cd): 670 pF

Maximum Drain-Source On-State Resistance (Rds): 0.095 Ohm

Package: TO263

2SJ296S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ296S Datasheet (PDF)

4.1. 2sj296l-s.pdf Size:50K _upd

2SJ296S
2SJ296S

www.DataSheet4U.com 2SJ296(L), 2SJ296(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate

5.1. 2sj297l-s.pdf Size:23K _upd

2SJ296S
2SJ296S

2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Sourc

5.2. 2sj293.pdf Size:30K _hitachi

2SJ296S
2SJ296S

2SJ293 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ293 Absolute Ma

 5.3. 2sj292.pdf Size:22K _hitachi

2SJ296S
2SJ296S

2SJ292 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2SJ292

5.4. 2sj294.pdf Size:25K _hitachi

2SJ296S
2SJ296S

2SJ294 Silicon P Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 1 2 3 • 4 V gate drive device can be driven from 1 5 V source • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain • Avalanche Ratings 3. Source 3 Table 1 Absolute Maximum Ratings (T

 5.5. 2sj295.pdf Size:31K _hitachi

2SJ296S
2SJ296S

2SJ295 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ295 Absolute Ma

Datasheet: 2SJ474-01L , 2SJ474-01S , 2SJ234L , 2SJ234S , 2SJ239 , 2SJ240 , 2SJ241 , 2SJ296L , BUZ10 , 2SJ297L , 2SJ297S , 2SJ492 , 2SJ302-Z , 2SJ314-01L , 2SJ314-01S , 2SJ324-Z , 2SJ325-Z .

 
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