2SJ324-Z Spec and Replacement
Type Designator: 2SJ324-Z
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO252
2SJ324-Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ324-Z Specs
2sj324-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sj320.pdf
Ordering number EN4615A P-Channel Silicon MOSFET 2SJ320 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ320] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO... See More ⇒
Detailed specifications: 2SJ296L , 2SJ296S , 2SJ297L , 2SJ297S , 2SJ492 , 2SJ302-Z , 2SJ314-01L , 2SJ314-01S , 75N75 , 2SJ325-Z , 2SJ326-Z , 2SJ327-Z , 2SJ328-Z , 2SJ332L , 2SJ332S , 2SJ355 , 2SJ357 .
History: HM4240
Keywords - 2SJ324-Z MOSFET specs
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History: HM4240
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MOSFET: AP3100A | AP30P06K | AP30P06
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