All MOSFET. 2SJ328-Z Datasheet

 

2SJ328-Z Datasheet and Replacement


   Type Designator: 2SJ328-Z
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO263
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2SJ328-Z Datasheet (PDF)

 ..1. Size:341K  nec
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2SJ328-Z

 8.1. Size:346K  nec
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2SJ328-Z

 9.1. Size:94K  sanyo
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2SJ328-Z

Ordering number:EN4615AP-Channel Silicon MOSFET2SJ320Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ320] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO

 9.2. Size:1872K  renesas
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2SJ328-Z

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: 2SJ492 , 2SJ302-Z , 2SJ314-01L , 2SJ314-01S , 2SJ324-Z , 2SJ325-Z , 2SJ326-Z , 2SJ327-Z , IRF9640 , 2SJ332L , 2SJ332S , 2SJ355 , 2SJ357 , 2SJ358 , 2SJ358C , 2SJ389L , 2SJ389S .

History: SWN2N65K | IXFP4N100QM | APT4016SVFRG | ZXMC3A18DN8 | AP50T10GJ-HF

Keywords - 2SJ328-Z MOSFET datasheet

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 2SJ328-Z equivalent finder
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