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2SJ332L Specs and Replacement


   Type Designator: 2SJ332L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO251
 

 2SJ332L substitution

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2SJ332L Specs

 0.1. Size:77K  hitachi
2sj332l-s.pdf pdf_icon

2SJ332L

www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline DPAK-2 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3. Source... See More ⇒

 9.1. Size:112K  toshiba
2sj338.pdf pdf_icon

2SJ332L

2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application Unit mm High breakdown voltage VDSS = -180 V High forward transfer admittance Y = 0.7 S (typ.) fs Complementary to 2SK2162 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS... See More ⇒

 9.2. Size:427K  toshiba
2sj334.pdf pdf_icon

2SJ332L

2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ334 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON-resistance RDS (ON) = 29 m (typ.) High forward transfer admittance Yfs = 23 S (typ.) Low leakage current IDSS = -100 A (max) (VDS = -60 V) Enhancement mode Vth = -0... See More ⇒

 9.3. Size:98K  sanyo
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2SJ332L

Ordering number EN4669 P-Channel Silicon MOSFET 2SJ337 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ337] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 Gate 0.6 0.5 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ337] 6.5 2.3 5.0 0.5 ... See More ⇒

Detailed specifications: 2SJ302-Z , 2SJ314-01L , 2SJ314-01S , 2SJ324-Z , 2SJ325-Z , 2SJ326-Z , 2SJ327-Z , 2SJ328-Z , 7N60 , 2SJ332S , 2SJ355 , 2SJ357 , 2SJ358 , 2SJ358C , 2SJ389L , 2SJ389S , 2SJ409L .

Keywords - 2SJ332L MOSFET specs

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