2SJ332L MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ332L

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 110 nS

Drain-Source Capacitance (Cd): 680 pF

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: TO251

2SJ332L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ332L Datasheet (PDF)

1.1. 2sj332l-s.pdf Size:77K _upd

www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Outline DPAK-2 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3. Source

5.1. 2sj334.pdf Size:427K _toshiba

2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-?-MOSV) 2SJ334 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 29 m? (typ.) High forward transfer admittance : |Yfs| = 23 S (typ.) Low leakage current : IDSS = -100 ?A (max) (VDS = -60 V) Enhancement mode : Vth = -0.8 t

5.2. 2sj338.pdf Size:112K _toshiba

2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance : |Y | = 0.7 S (typ.) fs Complementary to 2SK2162 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS

5.3. 2sj339.pdf Size:40K _sanyo

Ordering number:ENN6396 P-Channel Silicon MOSFET 2SJ339 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2063A � 4V drive. [2SJ339] � Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML Specifi

5.4. 2sj337.pdf Size:98K _sanyo

Ordering number:EN4669 P-Channel Silicon MOSFET 2SJ337 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2083B � Low-voltage drive. [2SJ337] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ337] 6.5 2.3 5.0 0.5 4 0.

5.5. 2sj330.pdf Size:338K _nec