2SJ409L MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ409L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 115 nS
Drain-Source Capacitance (Cd): 680 pF
Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
Package: TO263
2SJ409L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ409L Datasheet (PDF)
1.1. 2sj409l-s.pdf 
Size:27K _upd
2SJ409(L), 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V Gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source S 4. Drain 2SJ409(L), 2SJ409(S)
5.1. 2sj402.pdf Size:420K _toshiba
2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ402 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 29 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 23 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -60 V) DS Enhancement-mode :
5.2. 2sj407.pdf Size:397K _toshiba
2SJ407 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (?-MOSV) 2SJ407 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.8 ? (typ.) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = -100 µA (max) (V = -200 V) DSS DS Enhancement-mode : Vth = -1.5~-3.5 V
5.3. 2sj401.pdf Size:420K _toshiba
2SJ401 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ401 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 33 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 20 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -60 V) DS Enhancement-mode :
5.4. 2sj400.pdf Size:43K _sanyo
Ordering number:ENN6422 P-Channel Silicon MOSFET 2SJ400 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A 4V drive. [2SJ400] Enables simplified fabrication, high-density mount- 4.5 10.2 1.3 ing, and miniaturization in end products due to the surface mountable package. 1.2 0.8 0.4 1 2 3 1 :
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