IRFD024 MOSFET Datasheet: N-Ch, 60V, 2.5A. Full specification with pinout and replacement list

IRFD024 Specs and Replacement

Type Designator: IRFD024

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 360 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: HD-1

IRFD024 substitution

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IRFD024 datasheet

..1. Size:172K international rectifier
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..2. Size:1270K vishay
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IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available For Automatic Insertion RDS(on) ( )VGS = 10 V 0.10 RoHS* End Stackable Qg (Max.) (nC) 25 COMPLIANT 175 C Operating Temperature Qgs (nC) 5.8 Qgd (nC) 11 Fast Switching Configuration Single Ease of Paralleling Simple Drive Requiremen... See More ⇒

..3. Size:1268K vishay
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8.1. Size:242K vishay
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IRFD020, SiHFD020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) 50 Available Compact, End Stackable RDS(on) ( )VGS = 10 V 0.10 RoHS* Fast Switching Qg (Max.) (nC) 24 COMPLIANT Ease of Paralleling Qgs (nC) 7.1 Excellent Temperature Stability Qgd (nC) 7.1 Configuration Single Compliant to RoHS Directive 2002/95/EC... See More ⇒