Справочник MOSFET. IRFD024

 

IRFD024 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFD024
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.3 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 2.5 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 25(max) nC
   Время нарастания (tr): 58 ns
   Выходная емкость (Cd): 360 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.1 Ohm
   Тип корпуса: HD-1

 Аналог (замена) для IRFD024

 

 

IRFD024 Datasheet (PDF)

 ..1. Size:172K  international rectifier
 irfd024.pdf

IRFD024 IRFD024

 ..2. Size:1270K  vishay
 irfd024pbf sihfd024.pdf

IRFD024 IRFD024

IRFD024, SiHFD024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.10RoHS* End StackableQg (Max.) (nC) 25COMPLIANT 175 C Operating TemperatureQgs (nC) 5.8Qgd (nC) 11 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requiremen

 ..3. Size:1268K  vishay
 irfd024 sihfd024.pdf

IRFD024 IRFD024

IRFD024, SiHFD024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.10RoHS* End StackableQg (Max.) (nC) 25COMPLIANT 175 C Operating TemperatureQgs (nC) 5.8Qgd (nC) 11 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requiremen

 8.1. Size:242K  vishay
 irfd020 sihfd020.pdf

IRFD024 IRFD024

IRFD020, SiHFD020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 50Available Compact, End StackableRDS(on) ()VGS = 10 V 0.10RoHS* Fast SwitchingQg (Max.) (nC) 24 COMPLIANT Ease of ParallelingQgs (nC) 7.1 Excellent Temperature StabilityQgd (nC) 7.1Configuration Single Compliant to RoHS Directive 2002/95/EC

 8.2. Size:218K  vishay
 irfd020 irfd020pbf sihfd020.pdf

IRFD024 IRFD024

IRFD020, SiHFD020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 50Available Compact, End StackableRDS(on) ()VGS = 10 V 0.10RoHS* Fast SwitchingQg (Max.) (nC) 24 COMPLIANT Ease of ParallelingQgs (nC) 7.1 Excellent Temperature StabilityQgd (nC) 7.1Configuration Single Compliant to RoHS Directive 2002/95/EC

 9.1. Size:1360K  international rectifier
 irfd014pbf.pdf

IRFD024 IRFD024

PD- 95920IRFD014PbF Lead-Free10/27/04Document Number: 91125 www.vishay.com1IRFD014PbFDocument Number: 91125 www.vishay.com2IRFD014PbFDocument Number: 91125 www.vishay.com3IRFD014PbFDocument Number: 91125 www.vishay.com4IRFD014PbFDocument Number: 91125 www.vishay.com5IRFD014PbFDocument Number: 91125 www.vishay.com6IRFD014PbFPeak Diode Recovery

 9.2. Size:171K  international rectifier
 irfd014.pdf

IRFD024 IRFD024

 9.3. Size:439K  international rectifier
 irfd010 irfd012.pdf

IRFD024 IRFD024

 9.4. Size:2019K  vishay
 irfd014 sihfd014.pdf

IRFD024 IRFD024

IRFD014, SiHFD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.20RoHS* End StackableQg (Max.) (nC) 11COMPLIANT 175 C Operating TemperatureQgs (nC) 3.1Qgd (nC) 5.8 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requireme

 9.5. Size:2021K  vishay
 irfd014pbf sihfd014.pdf

IRFD024 IRFD024

IRFD014, SiHFD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.20RoHS* End StackableQg (Max.) (nC) 11COMPLIANT 175 C Operating TemperatureQgs (nC) 3.1Qgd (nC) 5.8 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requireme

Другие MOSFET... IRFBF20L , IRFBF20S , IRFBF30 , IRFBG20 , IRFBG30 , IRFBL10N60A , IRFBL12N50A , IRFD014 , IRF9540N , IRFD110 , IRFD120 , IRFD210 , IRFD214 , IRFD220 , IRFD224 , IRFD310 , IRFD320 .

 

 
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