AO4405E Specs and Replacement
Type Designator: AO4405E
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SO-8
AO4405E substitution
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AO4405E datasheet
ao4405e.pdf
AO4405E 30V P-Channel MOSFET General Description Product Summary VDS -30V Trench Power LV (P-ch) MOSFET technology Low RDS(ON) ID (at VGS=-10V) -6A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒
ao4405.pdf
AO4405 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ID (at VGS=-10V) -6A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V) ... See More ⇒
ao4405.pdf
SMD Type MOSFET P-Channel MOSFET AO4405 (KO4405) SOP-8 Features VDS (V) =-30V ID =-6 A (VGS =-10V) 1.50 0.15 RDS(ON) 50m (VGS =-10V) RDS(ON) 85m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 ... See More ⇒
ao4405.pdf
AO4405 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top Vi... See More ⇒
Detailed specifications: AO4266E, AO4268, AO4290A, AO4292E, AO4294, AO4294A, AO4296, AO4402G, 10N60, AO4423-L, AO4630, AO4840E, AO4862E, AO6411, AO6602G, AO6608, AOB12N65L
Keywords - AO4405E MOSFET specs
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