AO4405E MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4405E
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SO-8
AO4405E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4405E Datasheet (PDF)
ao4405e.pdf
AO4405E30V P-Channel MOSFETGeneral Description Product SummaryVDS -30V Trench Power LV (P-ch) MOSFET technology Low RDS(ON) ID (at VGS=-10V) -6A Low Gate Charge RDS(ON) (at VGS=-10V)
ao4405.pdf
AO440530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4405 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is ID (at VGS=-10V) -6Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)
ao4405.pdf
SMD Type MOSFETP-Channel MOSFETAO4405 (KO4405)SOP-8 Features VDS (V) =-30V ID =-6 A (VGS =-10V)1.50 0.15 RDS(ON) 50m (VGS =-10V) RDS(ON) 85m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDDGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30
ao4405.pdf
AO4405www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop Vi
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